Home / UGC NET PYQ / June 2025 Solved UGC NET Electronic Science June 2025 Question Paper with Answer Key and Full Explanations 📥 Download Question Paper (PDF) 2025 2024 2023 2022 2021 2020 Explanations 1. Answer: Option (3) For forming a p-type semiconductor, the dopant must be a trivalent impurity (three valence electrons) so that it creates acceptor levels and holes become the majority carriers. Among the given elements, boron (B) is a group-III element (trivalent). Arsenic (As) and phosphorus (P) are group-V (pentavalent) donors that produce n-type material, and germanium (Ge) is a group-IV element usually used as the semiconductor, not as an acceptor dopant. Hence, doping an intrinsic semiconductor with B produces a p-type semiconductor. 2. Answer: Option (4) The ohmic resistance of a JFET at zero gate bias is given by the standard relation: R DS(on) = V P / I DSS ...