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A silicon sample is doped with 1015 Arsenic atoms/cm3. What is the equilibrium hole concentration Pn at 300°K if the intrinsic hole & electron concentration is ni = 1.5 × 1010 atoms/cm3
54. A silicon sample is doped with 10 15 Arsenic atoms/cm 3 . What is the equilibrium hole concentration P n at 300°K if the intrinsic hole & electron concentration is n i = 1.5 × 10 10 atoms/cm 3 . A. 1.5 × 10 10 cm -3 B. 2.25 × 10 5 cm -3 C. 3.25 × 10 10 cm -3 D. 4.25 × 10 10 cm -3 Answer: Option B Solution n0*p0 = ni^2 Previous yr Question papers with Full Explanations →